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09100800 85C22 4LS37 MODEL860 19TR1A24 AT64035 Y7C13 SMD05
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  maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 250 v collector-emitter voltage v ceo 220 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma power dissipation p d 2.0 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 62.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =120v 50 na i cbo v cb =120v, t a =100c 50 a i ebo v eb =4.0v 50 na bv cbo i c =100 a 250 v bv ceo i c =1.0ma 220 v bv ebo i e =10 a 6.0 v v ce(sat) i c =10ma, i b =1.0ma 75 mv v ce(sat) i c =50ma, i b =5.0ma 100 mv v be(sat) i c =10ma, i b =1.0ma 1.00 v v be(sat) i c =50ma, i b =5.0ma 1.00 v ? ? ? ? ? ? CZT5551E enhanced specification surface mount npn silicon transistor sot-223 case central semiconductor corp. tm r0 (10-may 2006) description: the central semiconductor CZT5551E is an npn silicon transistor, packaged in an sot-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. features: ? high collector breakdown voltage 250v ? low leakage current 50na max ? low saturation voltage 100mv max @ 50ma ? complementary device czt5401e ? sot-223 surface mount package applications: ? general purpose switching and amplification ? telephone applications marking code: full part number ? enhanced specification
central semiconductor corp. tm sot-223 case - mechanical outline CZT5551E enhanced specification surface mount npn silicon transistor r0 (10-may 2006) lead code: 1) base 2) collector 3) emitter 4) collector marking code: full part number electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units h fe v ce =5.0v, i c =1.0ma 120 h fe v ce =5.0v, i c =10ma 120 300 h fe v ce =5.0v, i c =50ma 75 h fe v ce =10v, i c =150ma 25 f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 6.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 20 pf h fe v ce =10v, i c =1.0ma, f=1.0khz 50 200 nf v ce =5.0v, i c =200 a, r s =10 f=10hz to 15.7khz 8.0 db ? ? ? ? ? enhanced specification


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